Electronic and optical properties of low-dimensional group-IV monochalcogenides

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (Unesp)-
Autor(es): dc.contributorNational University of Singapore-
Autor(es): dc.creatorGomes, Lídia C. [UNESP]-
Autor(es): dc.creatorCarvalho, A.-
Data de aceite: dc.date.accessioned2022-02-22T00:47:43Z-
Data de disponibilização: dc.date.available2022-02-22T00:47:43Z-
Data de envio: dc.date.issued2021-06-25-
Data de envio: dc.date.issued2021-06-25-
Data de envio: dc.date.issued2020-09-28-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1063/5.0016003-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/206647-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/206647-
Descrição: dc.descriptionThe group-IV monochalcogenides are a set of binary materials M X composed by a group-IV element (M = Sn or Ge) and a chalcogen (X = S or Se). Strong anisotropy is one of the most interesting facets of these materials, especially in their low-dimensional form. In this Tutorial, we present some of the recent studies on the electronic and optical properties of 2D group-IV monochalcogenides, including predictions from first-principles density functional theory calculations and available experimental observations. We discuss the variation of the bandgap from bulk down to monolayer and the respective band structures, which are characterized by multiple valence and conduction band valleys, making these materials suitable for a variety of applications, including valleytronics. We also discuss the emergence of spin-orbit splitting, piezoelectricity, and ferroelectricity as a result of the polar character of the monolayers. Current predictions of carrier mobilities in monolayers and their potential application as thermoelectric materials are also presented.-
Descrição: dc.descriptionNational Research Foundation-
Descrição: dc.descriptionInstituto de Física Teórica São Paulo State University (UNESP), Rua Dr. Bento Teobaldo Ferraz, 271 - Várzea da Barra Funda-
Descrição: dc.descriptionCentre for Advanced 2D Materials National University of Singapore, 6 Science Drive 2-
Descrição: dc.descriptionInstituto de Física Teórica São Paulo State University (UNESP), Rua Dr. Bento Teobaldo Ferraz, 271 - Várzea da Barra Funda-
Descrição: dc.descriptionNational Research Foundation: R-144-000-295-281-
Idioma: dc.languageen-
Relação: dc.relationJournal of Applied Physics-
???dc.source???: dc.sourceScopus-
Título: dc.titleElectronic and optical properties of low-dimensional group-IV monochalcogenides-
Tipo de arquivo: dc.typelivro digital-
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