Temperature influence on analog figures-of-merit of nanosheet nMOSFET devices for sub-7nm technology node

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorImec-
Autor(es): dc.contributorUniversidade Estadual Paulista (Unesp)-
Autor(es): dc.creatorSilva, V. C.P.-
Autor(es): dc.creatorPerina, W. F.-
Autor(es): dc.creatorMartino, J. A. [UNESP]-
Autor(es): dc.creatorSimoen, E.-
Autor(es): dc.creatorVeloso, A.-
Autor(es): dc.creatorAgopian, P. G.D.-
Data de aceite: dc.date.accessioned2022-02-22T00:46:09Z-
Data de disponibilização: dc.date.available2022-02-22T00:46:09Z-
Data de envio: dc.date.issued2021-06-25-
Data de envio: dc.date.issued2021-06-25-
Data de envio: dc.date.issued2020-09-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/EUROSOI-ULIS49407.2020.9365565-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/206092-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/206092-
Descrição: dc.descriptionThis work analyzes the impact of temperature on the Analog figures of Merit of vertically stacked nanosheet nMOSFETs. The excellent electrostatic control between gate and channel results in a strong reduction of the short channel effect, as expected. The analog parameters like the intrinsic voltage gain, transistor efficiency and Early voltage are analyzed as a function of temperature. A high intrinsic voltage gain and a weak temperature dependence are observed, mainly at strong inversion region. The transistor efficiency and subthreshold swing maintain their value close to the theoretical limit.-
Descrição: dc.descriptionLSI/PSI/USP University of Sao Paulo-
Descrição: dc.descriptionImec-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Idioma: dc.languageen-
Relação: dc.relation2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectAnalog operation-
Palavras-chave: dc.subjectMOSFET-
Palavras-chave: dc.subjectNanosheets (NS)-
Título: dc.titleTemperature influence on analog figures-of-merit of nanosheet nMOSFET devices for sub-7nm technology node-
Aparece nas coleções:Repositório Institucional - Unesp

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