Study of a fringing field biosensor tunnel-FET

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorUniversidade Estadual Paulista (Unesp)-
Autor(es): dc.creatorMacambira, C. N.-
Autor(es): dc.creatorAgopian, P. G.D. [UNESP]-
Autor(es): dc.creatorMartino, J. A.-
Data de aceite: dc.date.accessioned2022-02-22T00:45:32Z-
Data de disponibilização: dc.date.available2022-02-22T00:45:32Z-
Data de envio: dc.date.issued2021-06-25-
Data de envio: dc.date.issued2021-06-25-
Data de envio: dc.date.issued2020-12-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1149/2162-8777/abdd85-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/205873-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/205873-
Descrição: dc.descriptionIn this paper, we present a comprehensive study of the Fringing Field Biosensor Tunnel-FET (Bio-TFET) device based on 2Ddevice simulation. The presence of a biomaterial with a distinct dielectric constant (k, where ∈ = k∗∈0) on the underlap region (LUD) between gate and drain affects the ambipolar drain current (ID). The Bio-TFET can be observed in the ambipolar region (i.e., for negative gate voltage in an n type Bio-nTFET device) due to the variation of the k, biomaterial thicknesses (tBio), the LUD, and/ or the presence of charges (QBio) into the biomaterial/silicon interface. The results show that the maximum sensitivity is observed when LUD= 30 nm (3 orders of magnitude higher compared with LUDof 25 nm lower or higher than 30 nm). When tBioincreases from 10 nm to 30 nm (for k = 10), the sensitivity increases up to 1 orders of magnitude. The presence of QBiointo the biomaterial also increases the sensitivity of 60 times for a fixed value of tBio= 30 nm and k = 10 and QBiochanging from 1 × 1010cm-2to 1 × 1012cm-2. The results show that the sensitivity of the fringing field Bio-nTFET is strongly dependent on the tunneling length modulation. c 2021 The Author(s).-
Descrição: dc.descriptionLSI/PSI/USP University of Sao Paulo-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Idioma: dc.languageen-
Relação: dc.relationECS Journal of Solid State Science and Technology-
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Título: dc.titleStudy of a fringing field biosensor tunnel-FET-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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