Voltage gain improvement of the operational transconductance amplifier designed with silicon-on-insulator fin field effect transistor after being exposed to proton-irradiation

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorUniversidade Estadual Paulista (Unesp)-
Autor(es): dc.creatorDe Sousa, Bruna Ramos-
Autor(es): dc.creatorDe Moraes Nogueira, Alexandro-
Autor(es): dc.creatorDer Agopian, Paula Ghedini [UNESP]-
Autor(es): dc.creatorMartino, Joao Antonio-
Data de aceite: dc.date.accessioned2022-02-22T00:45:26Z-
Data de disponibilização: dc.date.available2022-02-22T00:45:26Z-
Data de envio: dc.date.issued2021-06-25-
Data de envio: dc.date.issued2021-06-25-
Data de envio: dc.date.issued2021-03-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1088/1361-6641/abd349-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/205834-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/205834-
Descrição: dc.descriptionIn this work, the influence of proton-irradiation in the voltage gain of two-stage operational transconductance amplifier (OTA) designed with silicon-on-insulator (SOI) fin field effect transistors (FinFETs) is studied. The OTA simulations were performed using Verilog-A approach based on experimental data extracted from the SOI FinFET electrical characterization, before and after proton-irradiation. The OTA is designed with SOI FinFETs of fin widths (Wfin) of 20 nm, 120 nm, and 870 nm, all in the same predefined inversion region (gm/ID = 8 V-1). All evaluated OTA circuits exposed to proton-irradiation presented a voltage gain increase (compared with pre-irradiation circuits), of 0.87 dB, 1.19 dB, and 6.16 dB for fin widths of 20 nm, 120 nm, and 870 nm, respectively. The results show that despite the typical radiation effect of degradation of the individual transistors (it being more severe for larger fin width SOI FinFET), these effects combined in OTA circuits result in an unexpected improvement in DC voltage gain, especially for wider fins. Focusing on the fin width impact on the OTA voltage gain, before and after proton-irradiation, it is much greater for narrow fin width SOI FinFET thanks to the better Early voltage.-
Descrição: dc.descriptionLSI/PSI/USP University of Sao Paulo-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Idioma: dc.languageen-
Relação: dc.relationSemiconductor Science and Technology-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectFin field effect transistor-
Palavras-chave: dc.subjectOperational transconductance amplifier-
Palavras-chave: dc.subjectProton-irradiation-
Palavras-chave: dc.subjectVerilog-A-
Título: dc.titleVoltage gain improvement of the operational transconductance amplifier designed with silicon-on-insulator fin field effect transistor after being exposed to proton-irradiation-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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