Photo-induced electrical behavior under gas adsorption on SnO2 -based heterostructures

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (Unesp)-
Autor(es): dc.creatorMachado, Diego H.O. [UNESP]-
Autor(es): dc.creatorda Silva, José H.D. [UNESP]-
Autor(es): dc.creatorRusso, Fabrício T. [UNESP]-
Autor(es): dc.creatorScalvi, Luis V.A. [UNESP]-
Data de aceite: dc.date.accessioned2022-02-22T00:26:39Z-
Data de disponibilização: dc.date.available2022-02-22T00:26:39Z-
Data de envio: dc.date.issued2020-12-11-
Data de envio: dc.date.issued2020-12-11-
Data de envio: dc.date.issued2020-11-14-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1016/j.matchemphys.2020.123510-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/199171-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/199171-
Descrição: dc.descriptionEr-doped SnO2 thin films are produced by a combined technique where films are deposited by resistive evaporation from a precursor powder obtained by sol-gel. Films are deposited on different substrates and analyzed concerning the electrical conduction on different directions. The film conductivity (parallel to the surface) changed significantly when exposed to light, even though the photon energies are below the SnO2 bandgap energy (InGaN LED, 2.75 eV). The SnO2 films present distinct trapping characteristics when exposed to oxygen or carbon monoxide, in agreement with the behavior of metallic oxides, suggesting that surface defects act as adsorption sites. The photo-excitation is rather lower for a GaAs/SnO2 heterostructure sample where the GaAs layer is deposited by sputtering, since the direction of polarization (through the interface barrier, perpendicular to the sample surface) does not lead to significant increase in the sample current. When the bottom layer is a GaAs crystal wafer, the current magnitude increases drastically under the InGaN LED excitation. The results reported here contribute to the understanding of electrical transport and the influence of gas adsorption on evaporated SnO2 films deposited in diverse configurations on distinct substrates, and contributes to gas sensing applications.-
Descrição: dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionUNESP São Paulo State University Department of Physics FC and Graduate Program in Materials Science and Technology (POSMAT)-
Descrição: dc.descriptionUNESP São Paulo State University Department of Physics FC and Graduate Program in Materials Science and Technology (POSMAT)-
Descrição: dc.descriptionFAPESP: 2016/12216-6-
Descrição: dc.descriptionFAPESP: 2017/18916-2-
Idioma: dc.languageen-
Relação: dc.relationMaterials Chemistry and Physics-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectElectrical transport-
Palavras-chave: dc.subjectGallium arsenide-
Palavras-chave: dc.subjectGas sensing-
Palavras-chave: dc.subjectHeterostructure-
Palavras-chave: dc.subjectTin dioxide-
Título: dc.titlePhoto-induced electrical behavior under gas adsorption on SnO2 -based heterostructures-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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