Gold nanoparticles functionalized with 4,4’-dithiobiphenyl blended with CuS in PMMA for switching memory devices

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversity of Rome Sapienza-
Autor(es): dc.contributorUniversidade Estadual Paulista (Unesp)-
Autor(es): dc.creatorCerra, Sara-
Autor(es): dc.creatorPica, Paride-
Autor(es): dc.creatorCongiu, Mirko [UNESP]-
Autor(es): dc.creatorBoratto, M. H. [UNESP]-
Autor(es): dc.creatorGraeff, C. F.O. [UNESP]-
Autor(es): dc.creatorFratoddi, Ilaria-
Data de aceite: dc.date.accessioned2022-02-22T00:26:05Z-
Data de disponibilização: dc.date.available2022-02-22T00:26:05Z-
Data de envio: dc.date.issued2020-12-11-
Data de envio: dc.date.issued2020-12-11-
Data de envio: dc.date.issued2020-08-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1007/s10854-020-03753-5-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/198979-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/198979-
Descrição: dc.descriptionA switching memory device based on functionalized gold nanoparticles (AuNPs) and hexagonal copper sulfide nanocrystals (CuS), finely blended in polymethylmethacrylate matrix (PMMA), is herein presented. A two-electrode sandwich architecture has been implemented using aluminum top and bottom electrodes and a polymeric insulating layer based on PMMA/AuNPs/CuS. The device showed memory storage capabilities suitable for (Read Only Memory) ROM applications and behaves as a typical Write-Once, Read-Many-times (WORM) device. The results obtained with the blend containing AuNPs and/or CuS were compared with pure PMMA. By a voltage ramp in the range ± 9 V, it was possible to permanently change the electrical resistance between the electrodes yielding an ON/OFF current ratio above 105 with long-term stability over the whole experiment duration (30 days).-
Descrição: dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionDepartment of Chemistry University of Rome Sapienza, P.le A. Moro 5-
Descrição: dc.descriptionPOSMAT – Post-Graduate Program in Materials Science and Technology School of Sciences UNESP – São Paulo State University-
Descrição: dc.descriptionDepartment of Physics School of Sciences UNESP – São Paulo State University-
Descrição: dc.descriptionPOSMAT – Post-Graduate Program in Materials Science and Technology School of Sciences UNESP – São Paulo State University-
Descrição: dc.descriptionDepartment of Physics School of Sciences UNESP – São Paulo State University-
Descrição: dc.descriptionCAPES: 024/2012-
Descrição: dc.descriptionFAPESP: 2013/07396-7-
Descrição: dc.descriptionFAPESP: 2016/17302-8-
Descrição: dc.descriptionFAPESP: 2017/20809-0-
Formato: dc.format12083-12088-
Idioma: dc.languageen-
Relação: dc.relationJournal of Materials Science: Materials in Electronics-
???dc.source???: dc.sourceScopus-
Título: dc.titleGold nanoparticles functionalized with 4,4’-dithiobiphenyl blended with CuS in PMMA for switching memory devices-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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