Device-based threading dislocation assessment in germanium hetero-epitaxy

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorImec-
Autor(es): dc.contributorKyushu University-
Autor(es): dc.contributorKU Leuven-
Autor(es): dc.contributorUTFPR-
Autor(es): dc.contributorUniversidade Estadual Paulista (Unesp)-
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.creatorSimoen, Eddy-
Autor(es): dc.creatorClaeys, Cor-
Autor(es): dc.creatorOliveira, Alberto-
Autor(es): dc.creatorAgopian, Paula [UNESP]-
Autor(es): dc.creatorMartino, Joao-
Autor(es): dc.creatorHsu, Brent-
Autor(es): dc.creatorEneman, Geert-
Autor(es): dc.creatorRosseel, Eric-
Autor(es): dc.creatorLoo, Roger-
Autor(es): dc.creatorArimura, Hiroaki-
Autor(es): dc.creatorHoriguchi, Naoto-
Autor(es): dc.creatorWen, Wei-Chen-
Autor(es): dc.creatorNakashima, Hiroshi-
Data de aceite: dc.date.accessioned2022-02-22T00:24:16Z-
Data de disponibilização: dc.date.available2022-02-22T00:24:16Z-
Data de envio: dc.date.issued2020-12-11-
Data de envio: dc.date.issued2020-12-11-
Data de envio: dc.date.issued2019-08-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/SBMicro.2019.8919472-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/198334-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/198334-
Descrição: dc.descriptionA review on the electrical activity of extended defects and, more specifically, threading dislocations in germanium hetero-epitaxial layers is reported here. Focus is on the impact of some basic types of devices, like a p-n junction diode, a Metal-Oxide-Semiconductor (MOS) capacitor and a Fin-Field-Effect Transistor (FinFET) fabricated in Ge-on-Si. A good understanding of the impact on the leakage current and lifetime in p-n diodes will be shown. Deep-Level Transient Spectroscopy on Ge MOScaps enables the investigation of bulk and interface states related to threading dislocations Finally, the application of Generation-Recombination (GR) noise spectroscopy to the study of GR centers in strained and relaxed Ge-on-Si FinFETs will be illustrated.-
Descrição: dc.descriptionImec-
Descrição: dc.descriptionKyushu University-
Descrição: dc.descriptionEE Departm. KU Leuven-
Descrição: dc.descriptionUTFPR Campus Toledo-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Descrição: dc.descriptionUniversity of Sao Paulo-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Idioma: dc.languageen-
Relação: dc.relationSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectDeep-Level Transient Spectroscopy-
Palavras-chave: dc.subjectExtended Defects-
Palavras-chave: dc.subjectFinFETs-
Palavras-chave: dc.subjectGeneration-Recombination noise-
Palavras-chave: dc.subjectGermanium-on-silicon-
Palavras-chave: dc.subjectleakage current-
Palavras-chave: dc.subjectMOScap-
Palavras-chave: dc.subjectp-n junction diode-
Palavras-chave: dc.subjectThreading Dislocations-
Título: dc.titleDevice-based threading dislocation assessment in germanium hetero-epitaxy-
Aparece nas coleções:Repositório Institucional - Unesp

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