Application of UTBBBE SOI tunnel-FET as a dual-technology transistor

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade de São Paulo (USP)-
Autor(es): dc.contributorUniversidade Estadual Paulista (Unesp)-
Autor(es): dc.creatorCarlos Mori, A. B.-
Autor(es): dc.creatorPaula Agopian, G. D. [UNESP]-
Autor(es): dc.creatorMartino, Joao A.-
Data de aceite: dc.date.accessioned2022-02-22T00:24:13Z-
Data de disponibilização: dc.date.available2022-02-22T00:24:13Z-
Data de envio: dc.date.issued2020-12-11-
Data de envio: dc.date.issued2020-12-11-
Data de envio: dc.date.issued2019-08-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/SBMicro.2019.8919316-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/198329-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/198329-
Descrição: dc.descriptionIn this work we propose for the first time the use of the recently introduced UTBBBE SOI TFET (Ultra-Thin Body and Box Back Enhanced Silicon-On-Insulator Tunnel-FET) operating as a MOSFET device only by changing its bias condition. The principle is based on the carrier type generated by the back gate electric field. For negative back gate and drain biases applied in the device studied in this work, it works like a pTFET, while for positive ones it operates as an nMOS. TCAD device simulation was used for the proof of concept.-
Descrição: dc.descriptionUniversity of Sao Paulo LSI/PSI/USP-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Descrição: dc.descriptionUNESP Sao Paulo State University-
Idioma: dc.languageen-
Relação: dc.relationSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices-
???dc.source???: dc.sourceScopus-
Palavras-chave: dc.subjectdual technology transistor-
Palavras-chave: dc.subjectMOSFET-
Palavras-chave: dc.subjectReconfigurable transistor-
Palavras-chave: dc.subjectSilicon-On-Insulator (SOI)-
Palavras-chave: dc.subjectTunnel-FET-
Título: dc.titleApplication of UTBBBE SOI tunnel-FET as a dual-technology transistor-
Aparece nas coleções:Repositório Institucional - Unesp

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