On the nucleation of GaP/GaAs and the effect of buried stress fields

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual de Campinas (UNICAMP)-
Autor(es): dc.contributorLab Nacl Luz Sincroton-
Autor(es): dc.contributorUniversidade Estadual Paulista (Unesp)-
Autor(es): dc.creatorZelcovit, J. G.-
Autor(es): dc.creatorBortoleto, J. R. R. [UNESP]-
Autor(es): dc.creatorBettini, J.-
Autor(es): dc.creatorCotta, M. A.-
Autor(es): dc.creatorOlafsen, L. J.-
Autor(es): dc.creatorBiefeld, R. M.-
Autor(es): dc.creatorWanke, M. C.-
Autor(es): dc.creatorSaxler, A. W.-
Data de aceite: dc.date.accessioned2022-02-22T00:12:18Z-
Data de disponibilização: dc.date.available2022-02-22T00:12:18Z-
Data de envio: dc.date.issued2020-12-09-
Data de envio: dc.date.issued2020-12-09-
Data de envio: dc.date.issued2006-01-01-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/197373-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/197373-
Descrição: dc.descriptionWe have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study the growth of films of GaP by Chemical Beam Epitaxy (CBE), with in-situ monitoring by Reflection High Energy Electron Diffraction (RHEED), on layers of unstressed and stressed GaAs. Complementary, we have studied the role of a buried InP dot array on GaP nucleation in order to obtain three-dimensional structures. In both cases, the topographical characteristics of the samples were investigated by Atomic Force Microscopy (AFM) in non-contact mode. Thus vertically-coupled quantum dots of different materials have been obtained keeping the in-place spatial ordering originated from the composition modulation.-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionUniv Estadual Campinas, Inst Fis Gleb Wataghin, DFA, LPD, CP 6165, BR-13081790 Campinas, SP, Brazil-
Descrição: dc.descriptionLab Nacl Luz Sincroton, BR-13084971 Campinas, SP, Brazil-
Descrição: dc.descriptionGPM UNESP, LaPTec, BR-18085180 Sorocaba, SP, Brazil-
Descrição: dc.descriptionGPM UNESP, LaPTec, BR-18085180 Sorocaba, SP, Brazil-
Formato: dc.format133-+-
Idioma: dc.languageen-
Publicador: dc.publisherMaterials Research Soc-
Relação: dc.relationProgress In Semiconductor Materials V-novel Materials And Electronic And Optoelectronic Applications-
???dc.source???: dc.sourceWeb of Science-
Título: dc.titleOn the nucleation of GaP/GaAs and the effect of buried stress fields-
Aparece nas coleções:Repositório Institucional - Unesp

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