Engineering of the band gap induced by Ce surface enrichment in Ce-doped SnO2 nanocrystals

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Autor(es): dc.contributorUniv Nacl San Agustin Arequipa-
Autor(es): dc.contributorUniversidade de Brasília (UnB)-
Autor(es): dc.contributorUniversidade Estadual Paulista (Unesp)-
Autor(es): dc.contributorUniversidade Federal de São Carlos (UFSCar)-
Autor(es): dc.contributorUniv Fed Alfenas-
Autor(es): dc.creatorPacheco-Salazar, D. G.-
Autor(es): dc.creatorAragon, F. F. H.-
Autor(es): dc.creatorVillegas-Lelovsky, L. [UNESP]-
Autor(es): dc.creatorOrtiz de Zevallos, A.-
Autor(es): dc.creatorMarques, G. E.-
Autor(es): dc.creatorCoaquira, J. A. H.-
Data de aceite: dc.date.accessioned2022-02-22T00:11:42Z-
Data de disponibilização: dc.date.available2022-02-22T00:11:42Z-
Data de envio: dc.date.issued2020-12-09-
Data de envio: dc.date.issued2020-12-09-
Data de envio: dc.date.issued2020-10-15-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1016/j.apsusc.2020.146794-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/197249-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/197249-
Descrição: dc.descriptionSurface modification of oxide semiconductors nanocrystals can promote news effects mainly in nanocrystals up to 10 nm in diameter. In these systems, the ratio surface/core is increased, and the quantum effect can not rule out. A form of tuning the crystallite size is by doping process. Our results showed a monotonic nanoparticle size decrease from similar to 10 to similar to 3 nm accompanied by the progressive Ce-enriched surface, with the volume of the unit cell increases as the Ce content is increased, evidencing solid-solution formation between the Sn and Ce ions in the rutile-type structure. The Fourier Transform Infrared spectroscopy measurements show a redshift of the Sn-O stretching vibration peak, which is in good agreement with the solid solution of Ce and Sn ions. The dopant enrichment of the nanocrystal surface, as evidenced by Raman spectroscopy is associated with a monotonic decrease of the PL intensity. The latter is induced by a progressive decreasing of the relative dielectric constant between the core and shell regions, which in turn is related to the narrowing of the optical band gap energy with increasing of Ce content. We attribute this effect to the enhancement of the surface polarization contribution that overtakes the confinement effect contribution.-
Descrição: dc.descriptionUniversidad Nacional de San Agustin de Arequipa-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
Descrição: dc.descriptionFundacao de Amparo a Pesquisa do Distrito Federal (FAP/DF)-
Descrição: dc.descriptionUniv Nacl San Agustin Arequipa, Lab Peliculas Delgadas, Escuela Profes Fis, Ave Independencia S-N, Arequipa, Peru-
Descrição: dc.descriptionUniv Brasilia, Inst Fis, Nucleo Fis Aplicada, BR-70910900 Brasilia, DF, Brazil-
Descrição: dc.descriptionUniv Estadual Paulista, Dept Fis, IGCE, BR-13506900 Rio Claro, SP, Brazil-
Descrição: dc.descriptionUniv Fed Sao Carlos, Ctr Ciencias Exatas & Tecnol, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil-
Descrição: dc.descriptionUniv Fed Alfenas, Inst Ciencias Exatas, UNIFAL MG, BR-37133840 Alfenas, MG, Brazil-
Descrição: dc.descriptionUniv Estadual Paulista, Dept Fis, IGCE, BR-13506900 Rio Claro, SP, Brazil-
Descrição: dc.descriptionUniversidad Nacional de San Agustin de Arequipa: 17-2018-UNSA-
Formato: dc.format7-
Idioma: dc.languageen-
Publicador: dc.publisherElsevier B.V.-
Relação: dc.relationApplied Surface Science-
???dc.source???: dc.sourceWeb of Science-
Palavras-chave: dc.subjectNanocrystals-
Palavras-chave: dc.subjectCe doped SnO2-
Palavras-chave: dc.subjectSolubility limit-
Palavras-chave: dc.subjectSolid solution-
Palavras-chave: dc.subjectSurface segregation-
Palavras-chave: dc.subjectOptical band gap energy-
Título: dc.titleEngineering of the band gap induced by Ce surface enrichment in Ce-doped SnO2 nanocrystals-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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