X-ray absorption spectroscopy and Eu3+-emission characteristics in GaAs/SnO2 heterostructure

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (Unesp)-
Autor(es): dc.contributorUniv Grenoble Alpes-
Autor(es): dc.creatorBueno, Cristina F. [UNESP]-
Autor(es): dc.creatorRamos, Aline Y.-
Autor(es): dc.creatorBailly, Aude-
Autor(es): dc.creatorMossang, Eric-
Autor(es): dc.creatorScalvi, Luis V. A. [UNESP]-
Data de aceite: dc.date.accessioned2022-02-22T00:11:41Z-
Data de disponibilização: dc.date.available2022-02-22T00:11:41Z-
Data de envio: dc.date.issued2020-12-09-
Data de envio: dc.date.issued2020-12-09-
Data de envio: dc.date.issued2020-08-28-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1007/s42452-020-03344-3-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/197243-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/197243-
Descrição: dc.descriptionX-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) data are used for investigating heterostructure samples of GaAs/SnO2. XANES data are used for analyzing the local organization around Eu in the heterostructure formed by GaAs and Eu-doped SnO2. The differences between the XANES data for these samples and data obtained for Eu-doped SnO2 thin films, deposited on glass substrate, are assumed as responsible for the differences in the photoluminescence (PL) spectra concerning the Eu3+ emission, since films deposited on glass substrate do not present Eu3+ PL transitions until the annealing temperature is rather high. Eu3+ emission is explored using two different excitation sources: 350 nm from a Kr+ laser (above SnO2 energy bandgap) and 488 nm from an Ar+ laser (below SnO2 bandgap energy). The existence of more organized regions around the Eu3+ site observed for the heterostructure surface may be associated with the Eu3+ luminescent emission. The main and secondary features in the XANES show that there are differences in the average local Eu environment for the SnO2:Eu isolated thin films and heterostructures, being more organized in the latter. Electrical characterization evidences that the portion of the resistivity reduction that corresponds to photo-ionized intrabandgap states is responsible for the persistent photoconductivity phenomenon in the heterostructures.-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
Descrição: dc.descriptionSao Paulo State Univ UNESP, Postgrad Program Mat Sci & Technol POSMAT, Dept Phys FC, Bauru, SP, Brazil-
Descrição: dc.descriptionUniv Grenoble Alpes, Inst Neel, CNRS, F-38042 Grenoble, France-
Descrição: dc.descriptionSao Paulo State Univ UNESP, Postgrad Program Mat Sci & Technol POSMAT, Dept Phys FC, Bauru, SP, Brazil-
Descrição: dc.descriptionCAPES: 88881.131882/2016-01-
Descrição: dc.descriptionCAPES: 88887.375016/2019-00-CAPES-PRINT-
Formato: dc.format15-
Idioma: dc.languageen-
Publicador: dc.publisherSpringer-
Relação: dc.relationSn Applied Sciences-
???dc.source???: dc.sourceWeb of Science-
Palavras-chave: dc.subjectTin dioxide-
Palavras-chave: dc.subjectGallium arsenide-
Palavras-chave: dc.subjectHeterostructure-
Palavras-chave: dc.subjectElectro-optical properties-
Título: dc.titleX-ray absorption spectroscopy and Eu3+-emission characteristics in GaAs/SnO2 heterostructure-
Tipo de arquivo: dc.typelivro digital-
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