A dynamic time-temperature-dependent process for thermal oxidation of Sn leading to SnOx thin films: Impedance spectroscopy study

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (Unesp)-
Autor(es): dc.creatorBarreira, Enzo A. [UNESP]-
Autor(es): dc.creatorPedrini, Luiz F. K. [UNESP]-
Autor(es): dc.creatorBoratto, Miguel H. [UNESP]-
Autor(es): dc.creatorScalvi, Luis V. A. [UNESP]-
Data de aceite: dc.date.accessioned2022-02-22T00:11:39Z-
Data de disponibilização: dc.date.available2022-02-22T00:11:39Z-
Data de envio: dc.date.issued2020-12-09-
Data de envio: dc.date.issued2020-12-09-
Data de envio: dc.date.issued2020-07-30-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1142/S0217979220501842-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/197231-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/197231-
Descrição: dc.descriptionTin dioxide (SnO2) thin films are obtained from resistive evaporation of metallic Sn followed by thermal oxidation at different temperatures in the range 200-500 degrees C. Results show that, besides the thickness of the evaporated Sn thin film, the oxidation process of Sn into SnO2 is highly dependent on the annealing time and temperature, presenting tin monoxide (SnO), as an intermediate compound, result of partial oxidation of the metallic Sn at intermediary time and temperature. The optical and electrical properties of the Sn thin films are altered by the oxidation degree of Sn into SnOx. These important characteristics are evaluated through UV-Vis, SEM, EDS, XRD and Impedance Spectroscopy. Increase in the optical bandgap energy as well as in the surface charge density, verified by electrical impedance, are observed on samples with higher annealing temperature and time, which indicate sequential oxidation process in these films.-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionUNESP Sao Paulo State Univ, Dept Phys FC, Bauru, SP, Brazil-
Descrição: dc.descriptionUNESP POSMAT, Postgrad Program Mat Sci & Technol, Bauru, SP, Brazil-
Descrição: dc.descriptionUNESP Sao Paulo State Univ, Dept Phys FC, Bauru, SP, Brazil-
Descrição: dc.descriptionUNESP POSMAT, Postgrad Program Mat Sci & Technol, Bauru, SP, Brazil-
Descrição: dc.descriptionFAPESP: 2019/00683-7-
Descrição: dc.descriptionFAPESP: 2013/07296-2-
Descrição: dc.descriptionFAPESP: 2017/20809-0-
Formato: dc.format13-
Idioma: dc.languageen-
Publicador: dc.publisherWorld Scientific Publ Co Pte Ltd-
Relação: dc.relationInternational Journal Of Modern Physics B-
???dc.source???: dc.sourceWeb of Science-
Palavras-chave: dc.subjectTin dioxide-
Palavras-chave: dc.subjectresistive evaporation-
Palavras-chave: dc.subjectoxidation-
Palavras-chave: dc.subjectimpedance spectroscopy-
Título: dc.titleA dynamic time-temperature-dependent process for thermal oxidation of Sn leading to SnOx thin films: Impedance spectroscopy study-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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