Growth and vacuum post-annealing effect on the structural, electrical and optical properties of Sn-doped In2O3 thin films

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Autor(es): dc.contributorUniv Nacl San Agustin Arequipa-
Autor(es): dc.contributorUniversidade de Brasília (UnB)-
Autor(es): dc.contributorUniversidade Estadual Paulista (Unesp)-
Autor(es): dc.contributorUniversidade Federal de São Carlos (UFSCar)-
Autor(es): dc.creatorVilca-Huayhua, C. A.-
Autor(es): dc.creatorPaz-Corrales, K. J.-
Autor(es): dc.creatorAragon, F. F. H.-
Autor(es): dc.creatorMathpal, M. C.-
Autor(es): dc.creatorVillegas-Lelovsky, L. [UNESP]-
Autor(es): dc.creatorCoaquira, J. A. H.-
Autor(es): dc.creatorPacheco-Salazar, D. G.-
Data de aceite: dc.date.accessioned2022-02-22T00:11:36Z-
Data de disponibilização: dc.date.available2022-02-22T00:11:36Z-
Data de envio: dc.date.issued2020-12-09-
Data de envio: dc.date.issued2020-12-09-
Data de envio: dc.date.issued2020-09-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1016/j.tsf.2020.138207-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/197222-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/197222-
Descrição: dc.descriptionNowadays, the fabrication of cheaper, thermodynamically stable and durable transparent semiconducting oxide-based thin films are on high demand to enhance the properties of optoelectronic, sensing and energy harvesting devices. It is well known that Sn-doped In2O3 (ITO) thin films are difficult to grow by direct current sputtering. However, in this work cost-effective Sn-doped In2O3 films are deposited onto borosilicate glass substrates using a direct current sputtering of metallic In/Sn-target. The film thickness was controlled by the deposition time. A post-deposition annealing of the films in a vacuum atmosphere was performed in order to control the structural, optical and electrical properties. The phase formation, crystallite grain sizes (D) and lattice parameters have been assessed from the X-ray diffraction data analysis. Cross-section Scanning electron microscope image analyses were performed in order to estimate the growth rate of thin films. A band gap energy closing was observed associated with relaxation process of the unit cell suggested by the monotonic reduction of the lattice constant. Besides, a low sheet resistance (44 Ohm/square) was obtained, which is comparable to the commercially available ITO films. Furthermore, a inverse-square dependence between the sheet resistance and the grain size was determined (R-sq similar to 1/D-2). The last was used to estimate the carrier concentration of the thicker film similar to 10(20) cm(-3), which is in agreement with the value obtained from the Hall measurement.-
Descrição: dc.descriptionUniversidad Nacional de San Agustin de Arequipa-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
Descrição: dc.descriptionFAP/DF-
Descrição: dc.descriptionUniv Nacl San Agustin Arequipa, Lab Peliculas Delgadas, Escuela Profes Fis, Av Independencia S-N, Arequipa, Peru-
Descrição: dc.descriptionUniv Brasilia, Inst Fis, Nucleo Fis Aplicada, BR-70910900 Brasilia, DF, Brazil-
Descrição: dc.descriptionUniv Estadual Paulista, Dept Fis, IGCE, BR-13506900 Rio Claro, SP, Brazil-
Descrição: dc.descriptionUniv Fed Sao Carlos, Ctr Ciencias Exatas & Tecnol, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil-
Descrição: dc.descriptionUniv Estadual Paulista, Dept Fis, IGCE, BR-13506900 Rio Claro, SP, Brazil-
Descrição: dc.descriptionUniversidad Nacional de San Agustin de Arequipa: IBAIB-04-2018-UNSA-
Formato: dc.format6-
Idioma: dc.languageen-
Publicador: dc.publisherElsevier B.V.-
Relação: dc.relationThin Solid Films-
???dc.source???: dc.sourceWeb of Science-
Palavras-chave: dc.subjectVacuum annealing-
Palavras-chave: dc.subjectIndium tin oxide-
Palavras-chave: dc.subjectBand gap energy-
Palavras-chave: dc.subjectGrain size effect-
Palavras-chave: dc.subjectSheet resistance-
Palavras-chave: dc.subjectSputtering-
Título: dc.titleGrowth and vacuum post-annealing effect on the structural, electrical and optical properties of Sn-doped In2O3 thin films-
Tipo de arquivo: dc.typelivro digital-
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