Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (Unesp)-
Autor(es): dc.contributorPolytech Montreal-
Autor(es): dc.contributorOak Ridge Natl Lab-
Autor(es): dc.creatorBarbosa, Martin S. [UNESP]-
Autor(es): dc.creatorBalke, Nina-
Autor(es): dc.creatorTsai, Wan-Yu-
Autor(es): dc.creatorSantato, Clara-
Autor(es): dc.creatorOrlandi, Marcelo O. [UNESP]-
Data de aceite: dc.date.accessioned2022-02-22T00:10:45Z-
Data de disponibilização: dc.date.available2022-02-22T00:10:45Z-
Data de envio: dc.date.issued2020-12-09-
Data de envio: dc.date.issued2020-12-09-
Data de envio: dc.date.issued2020-05-07-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1021/acs.jpclett.0c00651-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/196903-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/196903-
Descrição: dc.descriptionThe structure of electrical double layers at electrified interfaces is of utmost importance for electrochemical energy storage as well as printable, flexible, and bioelectronic devices, such as ion-gated transistors (IGTs). Here we report a study based on atomic force microscopy force-distance profiling on electrical double layers forming at the interface between the ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide and sol-gel films of mesoporous tungsten oxide. We successfully followed, under in operando conditions, the evolution of the arrangement of the ions at the interface with the tungsten oxide films used as channel materials in IGTs. Our work sheds light on the mechanism of operation of IGTs, thus offering the possibility of optimizing their performance.-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
Descrição: dc.descriptionFluid Interface Reactions, Structures and Transport (FIRST) Center, an Energy Frontier Research Center (EFRC) - DOE Office of Science, Office of Basic Energy Sciences-
Descrição: dc.descriptionNSERC-
Descrição: dc.descriptionUniv Estadual Paulista, Dept Fis Quim, BR-14800060 Araraquara, SP, Brazil-
Descrição: dc.descriptionPolytech Montreal, Dept Genie Phys, Montreal, PQ H3C 3A7, Canada-
Descrição: dc.descriptionOak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA-
Descrição: dc.descriptionUniv Estadual Paulista, Dept Fis Quim, BR-14800060 Araraquara, SP, Brazil-
Descrição: dc.descriptionCAPES: FAPESP/CAPES 2014/27079-9-
Descrição: dc.descriptionCAPES: 2015/50526-4-
Descrição: dc.descriptionCAPES: 2016/09033-7-
Formato: dc.format3257-3262-
Idioma: dc.languageen-
Publicador: dc.publisherAmer Chemical Soc-
Relação: dc.relationJournal Of Physical Chemistry Letters-
???dc.source???: dc.sourceWeb of Science-
Título: dc.titleStructure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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