n-Channel bulk and DTMOS FinFETs: Investigation of GIDL and gate leakage currents

Registro completo de metadados
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorMagan, Caio Malingre-
Autor(es): dc.creatorMartino, Joao Antonio-
Autor(es): dc.creatorSimoen, Eddy-
Autor(es): dc.creatorClaeys, Cor-
Autor(es): dc.creatorDe Andrade, Maria Gloria Cano-
Data de aceite: dc.date.accessioned2021-03-11T00:54:05Z-
Data de disponibilização: dc.date.available2021-03-11T00:54:05Z-
Data de envio: dc.date.issued2018-12-11-
Data de envio: dc.date.issued2018-12-11-
Data de envio: dc.date.issued2016-11-02-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/SBMicro.2016.7731350-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/178539-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/178539-
Descrição: dc.descriptionIn this work GIDL (Gate Induced Drain Leakage) and Gate Leakage Currents (Ig) have been experimentally investigated for different dimensions of Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS) in linear and saturation regions. The results indicate that Bulk FinFETs present lower gate leakage currents than DTMOS FinFETs. In addition, an opposite IG behavior of those devices was observed when the channel lengths change. On the other hand, for long channels FinFETs the GIDL effect is lower in devices with DTMOS configuration because the benefit of DTMOS operation becomes higher.-
Idioma: dc.languageen-
Relação: dc.relationSBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum-
Direitos: dc.rightsopenAccess-
Palavras-chave: dc.subjectBulk-
Palavras-chave: dc.subjectDTMOS-
Palavras-chave: dc.subjectGIDL-
Palavras-chave: dc.subjectIG-
Palavras-chave: dc.subjectleakage current-
Título: dc.titlen-Channel bulk and DTMOS FinFETs: Investigation of GIDL and gate leakage currents-
Aparece nas coleções:Repositório Institucional - Unesp

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