New method for self-heating estimation using only DC measurements

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorMori, C. A.B.-
Autor(es): dc.creatorAgopian, P. G.D.-
Autor(es): dc.creatorMartino, J. A.-
Data de aceite: dc.date.accessioned2021-03-11T00:36:28Z-
Data de disponibilização: dc.date.available2021-03-11T00:36:28Z-
Data de envio: dc.date.issued2018-12-11-
Data de envio: dc.date.issued2018-12-11-
Data de envio: dc.date.issued2018-05-03-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/ULIS.2018.8354756-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/171293-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/171293-
Descrição: dc.descriptionThis paper reports a new method for estimating the thermal resistance of a device using the inverse of the transistor efficiency as a function of the power applied to the transistor's channel. The advantages of this new method are the use of DC measurements only and errors smaller than 4% in the estimation of the channel temperature increase due to the SHE when compared to a pulsed method for the UTBB SOI studied in this work.-
Formato: dc.format1-4-
Idioma: dc.languageen-
Relação: dc.relation2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018-
Direitos: dc.rightsclosedAccess-
Palavras-chave: dc.subjectSelf-heating effect-
Palavras-chave: dc.subjectSilicon-On-Insulator-
Palavras-chave: dc.subjectUTBB-
Título: dc.titleNew method for self-heating estimation using only DC measurements-
Aparece nas coleções:Repositório Institucional - Unesp

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