On the assessment of electrically active defects in high-mobility materials and devices

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorSimoen, Eddy-
Autor(es): dc.creatorEneman, Geert-
Autor(es): dc.creatorDe Oliveira, Alberto Vinicius-
Autor(es): dc.creatorNi, Kai-
Autor(es): dc.creatorMitard, Jerome-
Autor(es): dc.creatorWitters, Liesbeth-
Autor(es): dc.creatorDer Agopian, Paula Ghedini-
Autor(es): dc.creatorMartino, Joao Antonio-
Autor(es): dc.creatorFleetwood, Daniel M.-
Autor(es): dc.creatorSchrimpf, Ronald D.-
Autor(es): dc.creatorReed, Robert A.-
Autor(es): dc.creatorCollaert, Nadine-
Autor(es): dc.creatorThean, Aaron-
Autor(es): dc.creatorClaeys, Cor-
Data de aceite: dc.date.accessioned2021-03-11T00:33:27Z-
Data de disponibilização: dc.date.available2021-03-11T00:33:27Z-
Data de envio: dc.date.issued2018-12-11-
Data de envio: dc.date.issued2018-12-11-
Data de envio: dc.date.issued2017-07-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/ICSICT.2016.7998903-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/170090-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/170090-
Descrição: dc.descriptionA possible strategy for the characterization of grown-in and processing-induced electrically active point and extended defects in high-mobility substrates is presented and illustrated by examples obtained on Ge as a prototype system.-
Formato: dc.format300-303-
Idioma: dc.languageen-
Relação: dc.relation2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings-
Direitos: dc.rightsopenAccess-
Título: dc.titleOn the assessment of electrically active defects in high-mobility materials and devices-
Aparece nas coleções:Repositório Institucional - Unesp

Não existem arquivos associados a este item.