Low-frequency and random telegraph noise performance of Ge-based and III-V devices on a Si platform

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorClaeys, Cor-
Autor(es): dc.creatorAgopian, Paula-
Autor(es): dc.creatorAlian, Alirezza-
Autor(es): dc.creatorArimura, Hiroaki-
Autor(es): dc.creatorFang, Wen-
Autor(es): dc.creatorMartino, Joao-
Autor(es): dc.creatorMitard, Jerome-
Autor(es): dc.creatorNeves, Felipe-
Autor(es): dc.creatorOliviera, Alberto-
Autor(es): dc.creatorSimoen, Eddy-
Data de aceite: dc.date.accessioned2021-03-11T00:33:27Z-
Data de disponibilização: dc.date.available2021-03-11T00:33:27Z-
Data de envio: dc.date.issued2018-12-11-
Data de envio: dc.date.issued2018-12-11-
Data de envio: dc.date.issued2017-07-31-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/ICSICT.2016.7998900-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/170089-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/170089-
Descrição: dc.descriptionThis review demonstrates the potential of low frequency noise diagnostics for the characterization of Ge-based and III-V technologies processed on a Si platform. The analysis of traps in both gate dielectrics and semiconductor films is illustrated for state-of-the-art devices.-
Formato: dc.format288-293-
Idioma: dc.languageen-
Relação: dc.relation2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings-
Direitos: dc.rightsopenAccess-
Título: dc.titleLow-frequency and random telegraph noise performance of Ge-based and III-V devices on a Si platform-
Aparece nas coleções:Repositório Institucional - Unesp

Não existem arquivos associados a este item.