Impact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processes

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Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorDe Oliveira, Alberto Vinicius-
Autor(es): dc.creatorSimoen, Eddy-
Autor(es): dc.creatorDer Agopian, Paula Ghedini-
Autor(es): dc.creatorMartino, João Antonio-
Autor(es): dc.creatorMitard, Jérôme-
Autor(es): dc.creatorWitters, Liesbeth-
Autor(es): dc.creatorCollaert, Nadine-
Autor(es): dc.creatorThean, Aaron-
Autor(es): dc.creatorClaeys, Cor-
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Descrição: dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionFonds Wetenschappelijk Onderzoek-
Descrição: dc.descriptionOne of future device candidates for the Si platform integration, the Ge pFinFET, is evaluated for two different shallow-trench-isolation (STI) processes at low temperature operation. The effective mobility around 700 cm2/Vs at 77 K is reported for both STI processes, as a result of the compressive strain in the channel. Regarding the OFF-state region, it is found that the substrate current plays an important role at room temperature and for long channels. It decreases up to three orders of magnitude from room temperature down to 200 K, as long as the p-n junction reverse current from the drain to bulk dominates the substrate current.-
Idioma: dc.languageen-
Relação: dc.relation2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016-
Direitos: dc.rightsopenAccess-
Palavras-chave: dc.subjectGe pFinFET-
Palavras-chave: dc.subjectlong strained device-
Palavras-chave: dc.subjectlow temperature operation-
Palavras-chave: dc.subjectSTI first-
Palavras-chave: dc.subjectSTI last-
Título: dc.titleImpact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processes-
Aparece nas coleções:Repositório Institucional - Unesp

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