Enhanced Model for ZTC in Irradiated and Strained pFinFET

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorNascimento, Vinicius M.-
Autor(es): dc.creatorAgopian, Paula G. D.-
Autor(es): dc.creatorSimoen, Eddy-
Autor(es): dc.creatorClaeys, Cor-
Autor(es): dc.creatorMartino, Joao A.-
Autor(es): dc.creatorIEEE-
Data de aceite: dc.date.accessioned2021-03-10T23:46:51Z-
Data de disponibilização: dc.date.available2021-03-10T23:46:51Z-
Data de envio: dc.date.issued2018-11-26-
Data de envio: dc.date.issued2018-11-26-
Data de envio: dc.date.issued2017-01-01-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/160132-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/160132-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionThis paper presents for the first time the inclusion of a p-type transistor in the CM (Camilo/Martino) ZTC (Zero Temperature Coefficient) analytical model. It was used for strained SOI pFinFETs submitted to proton radiation, enabling a comparison of the improved theoretical model with the experimental data. It was observed that both the proton irradiation and mechanical strain influence the transconductance (gm) and the threshold voltage (VTH), and both effects change the ZTC voltage (VZTC) as a function of temperature following the proposed model. For the studied devices and the investigated range of temperatures, the maximum error between experimental and model data was less than 13% in the worst case. Now with an n and p-type model, it is easier to use it to design CMOS analog circuits biased on/near the ZTC region.-
Formato: dc.format4-
Idioma: dc.languageen-
Publicador: dc.publisherIeee-
Relação: dc.relation2017 32nd Symposium On Microelectronics Technology And Devices (sbmicro): Chip On The Sands-
Direitos: dc.rightsopenAccess-
Palavras-chave: dc.subjectSOI-
Palavras-chave: dc.subjectpFinFET-
Palavras-chave: dc.subjectZero Temperature Coefficient-
Palavras-chave: dc.subjectstrain-
Palavras-chave: dc.subjectradiation-
Título: dc.titleEnhanced Model for ZTC in Irradiated and Strained pFinFET-
Aparece nas coleções:Repositório Institucional - Unesp

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