Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective

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MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorBordallo, Caio C. M.-
Autor(es): dc.creatorSivieri, Victor B.-
Autor(es): dc.creatorMartino, Joao Antonio-
Autor(es): dc.creatorAgopian, Paula G. D.-
Autor(es): dc.creatorRooyackers, Rita-
Autor(es): dc.creatorVandooren, Anne-
Autor(es): dc.creatorSimoen, Eddy-
Autor(es): dc.creatorThean, Aaron Voon-Yew-
Autor(es): dc.creatorClaeys, Cor-
Data de aceite: dc.date.accessioned2021-03-10T23:44:03Z-
Data de disponibilização: dc.date.available2021-03-10T23:44:03Z-
Data de envio: dc.date.issued2018-11-26-
Data de envio: dc.date.issued2018-11-26-
Data de envio: dc.date.issued2016-07-01-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1109/TED.2016.2559580-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/158936-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/158936-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionimec's Logic Device Program-
Descrição: dc.descriptionIn this work, the impact of the diameter on vertical nanowire tunnel field effect transistors is analyzed focusing on the conduction mechanism and analog parameters, considering different conduction regimes. The diameter influence is investigated using experimental and simulation data. The impact of the diameter on the analog parameters is analyzed, considering both weak and strong conduction. For a smaller diameter, the impact of band-to-band tunneling (BTBT) on the device characteristics increases, showing opposite trends for weak and strong conduction. For strong conduction, a degradation of the intrinsic voltage gain occurs for very small diameters, because the device has less available area for the occurrence of tunneling. For weak conduction, the reduction of the diameter increases the BTBT along the channel/source junction without showing this degradation.-
Formato: dc.format2930-2935-
Idioma: dc.languageen-
Publicador: dc.publisherIeee-inst Electrical Electronics Engineers Inc-
Relação: dc.relationIeee Transactions On Electron Devices-
Relação: dc.relation0,839-
Direitos: dc.rightsopenAccess-
Palavras-chave: dc.subjectAnalog performance-
Palavras-chave: dc.subjectband-to-band tunneling (BTBT)-
Palavras-chave: dc.subjectconduction mechanism-
Palavras-chave: dc.subjecttunnel field effect transistor (TFET)-
Título: dc.titleImpact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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