Transport properties of polycrystalline boron doped diamond

Registro completo de metadados
MetadadosDescriçãoIdioma
Autor(es): dc.contributorUniversidade Estadual Paulista (UNESP)-
Autor(es): dc.creatorOliveira, J. R. de-
Autor(es): dc.creatorBerengue, O. M.-
Autor(es): dc.creatorMoro, J.-
Autor(es): dc.creatorFerreira, N. G.-
Autor(es): dc.creatorChiquito, A. J.-
Autor(es): dc.creatorBaldan, M. R.-
Data de aceite: dc.date.accessioned2021-03-10T21:29:38Z-
Data de disponibilização: dc.date.available2021-03-10T21:29:38Z-
Data de envio: dc.date.issued2015-03-18-
Data de envio: dc.date.issued2015-03-18-
Data de envio: dc.date.issued2014-08-30-
Fonte completa do material: dc.identifierhttp://dx.doi.org/10.1016/j.apsusc.2014.04.161-
Fonte completa do material: dc.identifierhttp://hdl.handle.net/11449/116418-
Fonte: dc.identifier.urihttp://educapes.capes.gov.br/handle/11449/116418-
Descrição: dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
Descrição: dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
Descrição: dc.descriptionCNPq: 2010/302640-0-
Descrição: dc.descriptionProcesso FAPESP: 11/10171-1-
Descrição: dc.descriptionThe influence of doping level in the electronic conductivity and resistivity properties of synthetic diamond films grown by hot filament chemical vapor deposition (HFCVD) was investigated. Eight different doping level concentrations varied from 500 to 30,000 ppm were considered. The polycrystalline morphology observed by scanning electron microscopy and Raman spectra was strongly affected by the addition of boron. The electric characterization by Hall effect as a function of temperature and magnetic field showed that at sufficiently low temperatures, electrical conduction is dominated by variable range hopping (VRH) conducting process. The resistivity was also investigated by temperature-dependent transport measurements in order to investigate the conduction mechanism in the doped samples. The samples exhibited the VRH (m = 1/4) mechanism in the temperature range from 77 to 300 K. The interface between metal, and our HFCVD diamond was also investigated for the lower doped samples. (C) 2014 Elsevier B.V. All rights reserved.-
Formato: dc.format5-8-
Idioma: dc.languageen-
Publicador: dc.publisherElsevier B.V.-
Relação: dc.relationApplied Surface Science-
Relação: dc.relation4.439-
Relação: dc.relation1,093-
Direitos: dc.rightsclosedAccess-
Palavras-chave: dc.subjectDiamond-
Palavras-chave: dc.subjectBDD-
Palavras-chave: dc.subjectHall effect-
Título: dc.titleTransport properties of polycrystalline boron doped diamond-
Tipo de arquivo: dc.typelivro digital-
Aparece nas coleções:Repositório Institucional - Unesp

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